Combination glass/low temperature deposited Si.sub.w N.sub.x H.s

Details Combination glass/low temperature deposited Si.sub.w N.sub.x H.s Combination glass/low temperature deposited Si.sub.w N.sub.x H.s

1976-11-01

1978-05-23

Clawson, Jr., Joseph E.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 71, 357 73, 427 94, H01C 2934

Patent

active

040914070

ABSTRACT:
A semiconductor device having an improved passivating structure comprises a first primary passivating layer free of any layer of silicon nitride (Si.sub.3 N.sub.4), disposed on a surface of a semiconductor body, a metallic conductor disposed on the first passivating layer, and a secondary passivating overcoat disposed over the metallic conductor, wherein the secondary passivating overcoat includes both a glass layer on the conductor and a low-temperature-deposited (typically 300.degree. C) nitride layer on the glass layer. The device is highly resistant to degradation in the presence of water vapor and corrosive atmospheres.

REFERENCES:
patent: 3422321 (1969-01-01), Tombs
patent: 3424661 (1969-01-01), Androshuk et al.
patent: 3607697 (1971-09-01), Shirn et al.
patent: 3635774 (1972-01-01), Ohta
patent: 3745428 (1973-07-01), Miswa et al.
patent: 3765935 (1973-10-01), Rand et al.
patent: 3838442 (1974-09-01), Humphreys
patent: 3967310 (1976-06-01), Horiuchi et al.
patent: 4001871 (1977-01-01), Tsungmitsu
patent: 4001872 (1977-01-01), Khajezadeh
P. Burkhardt, "Composite Silicon Dioxide-Silicon Oxynitride Insulating Layer," IBM Tech. Discl. Bull, vol. 13, #1, Jun. 1970, p. 21.
G. Ackermann et al., "Process for Deposition of Oxynitride," IBM Tech. Discl. Bull, vol. 15, #12, May 1973, p. 3888.

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