Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1976-11-01
1978-05-23
Clawson, Jr., Joseph E.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
357 71, 357 73, 427 94, H01L 2934
Patent
active
040914062
ABSTRACT:
A semiconductor device including a body of semiconductor material with a metallic conductor disposed thereon has a combination glass/low-temperature-(typically 300.degree. C) deposited Si.sub.w N.sub.x H.sub.y O.sub.z passivating overcoat with improved crack and corrosion resistance. A primary passivating layer including Si.sub.3 N.sub.4 is between the semiconductor surface and the metallic conductor, and the glass is formed over the metallic conductor, with the low-temperature-deposited nitride over the glass.
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P. Burkhardt, "Composite Silicon Dioxide-Silicon Oxynitride Insulating Layer," IBM Tech. Discl. Bull., vol. 13, #1, Jun. 1970, p. 21.
G. Ackermann et al., "Process for Deposition of Oxynitride, "IBM Tech. Discl. Bull., vol. 15, #12, May 1973, p. 3888.
Christoffersen H.
Clawson Jr. Joseph E.
Magee T. H.
RCA Corporation
Williams R. P.
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