Combination glass/low temperature deposited Si.sub.w N.sub.x H.s

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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357 71, 357 73, 427 94, H01L 2934

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active

040914062

ABSTRACT:
A semiconductor device including a body of semiconductor material with a metallic conductor disposed thereon has a combination glass/low-temperature-(typically 300.degree. C) deposited Si.sub.w N.sub.x H.sub.y O.sub.z passivating overcoat with improved crack and corrosion resistance. A primary passivating layer including Si.sub.3 N.sub.4 is between the semiconductor surface and the metallic conductor, and the glass is formed over the metallic conductor, with the low-temperature-deposited nitride over the glass.

REFERENCES:
patent: 3422321 (1969-01-01), Tombs
patent: 3424661 (1969-01-01), Androshuk et al.
patent: 3607697 (1971-09-01), Shirn et al.
patent: 3635774 (1972-01-01), Ohta
patent: 3745428 (1973-07-01), Miswa et al.
patent: 3765935 (1973-10-01), Rand et al.
patent: 3838442 (1974-09-01), Humphreys
patent: 3967310 (1976-06-01), Horiuchi et al.
patent: 4001871 (1977-01-01), Tsunemitsu
patent: 4001872 (1977-01-01), Khajezadeh
P. Burkhardt, "Composite Silicon Dioxide-Silicon Oxynitride Insulating Layer," IBM Tech. Discl. Bull., vol. 13, #1, Jun. 1970, p. 21.
G. Ackermann et al., "Process for Deposition of Oxynitride, "IBM Tech. Discl. Bull., vol. 15, #12, May 1973, p. 3888.

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