Combination gas curtains for continuous chemical vapor depositio

Details Combination gas curtains for continuous chemical vapor depositio Combination gas curtains for continuous chemical vapor depositio

1980-07-28

1984-04-24

Childs, S. L.

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

427 86, 4272555, 427314, C23C 1100, C23C 1300

Patent

active

044448120

ABSTRACT:
A process for producing electronic-grade silicon bodies is disclosed wherein continuously-pulled slim rods which can be formed in situ from the reaction of a seed crystal and a molten silicon source, are pulled into and through a chemical vapor deposition chamber, having in combination different gas curtains along the chamber inner wall, the slim rod surfaces being preheated before entry into the deposition chamber where the rods are simultaneously exposed to heating and thermally decomposable gaseous silicon compounds in order to provide suitable surface reaction conditions on the slim rods for the decomposition of the gaseous silicon compounds resulting in deposition growth upon the surfaces of the rods.

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