Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-06-17
2008-06-17
Deo, Duy-Vu N (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S717000, C438S718000
Reexamination Certificate
active
07387967
ABSTRACT:
A method of manufacturing a dot pattern includes the steps of preparing a structured material composed of a plurality of columnar members containing a first component and a region containing a second component different from the first component surrounding the columnar members, with the structured material being formed by depositing the first component and the second component on a substrate, and removing the columnar members from the structured material to form a porous material having a columnar hole. Additional steps include introducing a mask material into the columnar hole of the porous material to form a dot pattern, and removing the porous material.
REFERENCES:
patent: 3674658 (1972-07-01), van Asperen et al.
patent: 4420365 (1983-12-01), Lehrer
patent: 5068152 (1991-11-01), Maro et al.
patent: 5131954 (1992-07-01), Vogeli et al.
patent: 5240558 (1993-08-01), Kawasaki et al.
patent: 5244828 (1993-09-01), Okada et al.
patent: 5369873 (1994-12-01), Walters et al.
patent: 6027796 (2000-02-01), Kondoh et al.
patent: 6602620 (2003-08-01), Kikitsu et al.
patent: 6730421 (2004-05-01), Kirino et al.
patent: 7282268 (2007-10-01), Fukutani et al.
patent: 2001/0042502 (2001-11-01), Shih et al.
patent: 2002/0167013 (2002-11-01), Iwasaki et al.
patent: 2003/0175472 (2003-09-01), Den et al.
patent: 2004/0033339 (2004-02-01), Fukutani et al.
patent: 2004/0043208 (2004-03-01), Fukutani et al.
patent: 2004/0048092 (2004-03-01), Yasui et al.
patent: 2004/0166376 (2004-08-01), Kirino et al.
patent: 0 851 506 (1998-07-01), None
patent: 58-142523 (1983-08-01), None
patent: 2-139714 (1990-05-01), None
patent: 5-55545 (1993-03-01), None
patent: 7-202164 (1995-08-01), None
patent: 9-157062 (1997-06-01), None
patent: 11-31862 (1999-02-01), None
patent: 11-112099 (1999-04-01), None
patent: 11-251334 (1999-09-01), None
patent: 2000-327491 (2000-11-01), None
patent: 2001-261376 (2001-09-01), None
patent: WO 01/71394 (2001-09-01), None
patent: WO 03/069677 (2003-08-01), None
Wolf et al., Silicon Processing for the VLSI Era, vol. 1, 1986, pp. 407-408.
M. Haupt, et al., “Semiconductor Nanostructures Defined with Self-Organizing Polymers”, Journal of Applied Physics, vol. 91, No. 9, pp. 6057-6059 (May 1, 2002).
M. Jacobs, et al., “Unbalanced Magnetron Sputtered Si-Al Coatings: Plasma Conditions and Film Properties Versus Sample Bias Voltage”, Surface and Coatings Technology, 116-119, pp. 735-741 (1999).
C.D. Adams, et al., “Transition from Lateral to Transverse Phase Separation During Film Co-Deposition”, Appl. Phys. Lett., 59 (20), pp. 2535-2537 (Nov. 11, 1991).
M. Atzmon, et al., “Phase Separation During Film Growth”, J. Appl. Phys. 72 (2), pp. 442-446 (Jul. 15, 1992).
C.D. Adams, et al., “Monte Carlo Simulation of Phase Separation During Thin-Film Codeposition”, J. Appl. Phys., 74 (3), pp. 1707-1715 (Aug. 1, 1993).
C.D. Adams, et al., “Phase Separation During Co-Deposition of Al-Ge Thin Films”, Journal of Materials Research, vol. 7, No. 3, p. 653 (Mar. 1992).
N. E. Sluchanko, et al., “Late Stages of Phase Separation in Al1-xSixSolid Solutions”, Physical Review B, vol. 53, No. 17, pp. 11 304-11 306 (May 1, 1996).
Den Tohru
Fukutani Kazuhiko
Kuriyama Akira
Miyata Hirokatsu
Ogawa Miki
Canon Kabushiki Kaisha
Deo Duy-Vu N
Fitzpatrick ,Cella, Harper & Scinto
LandOfFree
Columnar structured material and method of manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Columnar structured material and method of manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Columnar structured material and method of manufacturing the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2807891