Colorless silicon carbide crystals

Compositions: ceramic – Ceramic compositions – Synthetic precious stones

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Details

252 623C, 117951, 501 88, C04B 35565, C30B 2936

Patent

active

060252898

ABSTRACT:
Large single crystals of silicon carbide are grown in a furnace sublimation system. The crystals are grown with compensating levels of p-type and n-type dopants (i.e., roughly equal levels of the two dopants) in order to produce a crystal that is essentially colorless. The crystal may be cut and fashioned into synthetic gemstones having extraordinary toughness and hardness, and a brilliance meeting or exceeding that of diamond.

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Introduction to Ceramics, W. D. Kingery et al., Second Edition, John Wiley & Sons, pp. 676-679 No Date.
Optical and Electronic Properties of SiC, W.H. Choyke, The Physics and Chemistry of Carbides, Nitrides and Borides , Manchester, England, Sep. 1989, pp. 1-25 35 al.
Woo Sik Yee, "Bulk Crystal Growth of 6-H-SiC on Polytype Controlled Substrates through Vapor Phase and Characterization,", Journal of Crystal Growth; Dec. 2, 1991; vol. 15, No. 1/04; Amsterdam.

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