Compositions: ceramic – Ceramic compositions – Synthetic precious stones
Patent
1997-12-04
2000-02-15
Group, Karl
Compositions: ceramic
Ceramic compositions
Synthetic precious stones
252 623C, 117951, 501 88, C04B 35565, C30B 2936
Patent
active
060252898
ABSTRACT:
Large single crystals of silicon carbide are grown in a furnace sublimation system. The crystals are grown with compensating levels of p-type and n-type dopants (i.e., roughly equal levels of the two dopants) in order to produce a crystal that is essentially colorless. The crystal may be cut and fashioned into synthetic gemstones having extraordinary toughness and hardness, and a brilliance meeting or exceeding that of diamond.
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Woo Sik Yee, "Bulk Crystal Growth of 6-H-SiC on Polytype Controlled Substrates through Vapor Phase and Characterization,", Journal of Crystal Growth; Dec. 2, 1991; vol. 15, No. 1/04; Amsterdam.
Carter Calvin H.
Glass Robert C.
Tsvetkov Valeri F.
Cree Research Inc.
Group Karl
Summa, Patent Attorney Philip
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