Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-05-09
2006-05-09
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S149000, C438S158000
Reexamination Certificate
active
07041522
ABSTRACT:
In a manufacturing method of a color liquid crystal display device, a first conductive film is formed on a transparent insulating substrate to form a gate electrode and a gate bus line (first PR process). A gate insulating film, a semiconductor layer, an ohmic layer, and a second conductive film are deposited to form an island of a thin film transistor and a drain bus line (second PR process). Then, color filters in respective three colors are formed in their respective predetermined regions on the transparent insulating substrate in succession (third through fifth PR processes). A black matrix is formed, and a drain electrode and a source electrode are formed in the island by removing the second conductive film and ohmic layer on a region corresponding to the channel region by using the black matrix as a mask (sixth PR process). Then, a planarization film and a pixel electrode are formed (seventh and eighth PR processes).
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Hashimoto Yoshiaki
Kido Syuusaku
Sakamoto Michiaki
Tanaka Hiroaki
Watanabe Takahiko
Mulpuri Savitri
NEC LCD Technologies Ltd.
Young & Thompson
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