Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-07-27
2009-08-25
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S443000, C257SE27134, C257SE27135
Reexamination Certificate
active
07579665
ABSTRACT:
A light receiving device and an image pickup device in which a plurality of light receiving devices are arranged are provided. The light receiving device comprises a single semiconductor substrate and a light receiving device that has a first photoelectric conversion part and a second photoelectric conversion part. The single semiconductor substrate comprises regions of a first conductivity type and regions of a second conductivity type in an alternately multiply stacked manner. Depths of each of the junction surfaces between the regions of first conductivity type and second conductivity type are formed at depths such that light mainly in the blue or red wavelength regions can be photo-electrically converted. The respective detected wavelengths of the first photoelectric conversion part and second photoelectric conversion part are longer than the central wavelength of the blue wavelength region, and shorter than the central wavelength of the red wavelength region.
REFERENCES:
patent: 5965875 (1999-10-01), Merrill
patent: 2003/0209651 (2003-11-01), Iwasaki
patent: 2005/0087829 (2005-04-01), Merrill et al.
patent: A 7-038136 (1995-02-01), None
Fukunaga Toshiaki
Yokoyama Daisuke
Burke Margaret A.
FUJIFILM Corporation
Moss Sheldon J.
Tran Minh-Loan T
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