Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-05-02
2006-05-02
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S200000
Reexamination Certificate
active
07038240
ABSTRACT:
A color display device comprises a plurality of pixel regions having different areas, which may be realized by differences in the horizontal width, corresponding to different color components. Each pixel region is provided with a first thin film transistor for selectively supplying a signal corresponding to a display information to the pixel region, and a storage capacitor connected to the first thin film transistor for retaining the signal corresponding to the display information. A plan view distance obtained by projecting onto a display plane surface an extent from the capacitor-side end portion of a gate of the first thin film transistor to the storage capacitor is configured identical in the respective pixel regions. With this arrangement, the need to adjust for each color component the writing time and rate of the signal supplied via the first thin film transistor can be eliminated, even when the pixel regions have different areas.
REFERENCES:
patent: 5610736 (1997-03-01), Asai
Cantor & Colburn LLP
Nelms David
Nguyen Thinh T
Sanyo Electric Co,. Ltd.
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