Color active pixel sensor with electronic shuttering, anti-bloom

Details Color active pixel sensor with electronic shuttering, anti-bloom Color active pixel sensor with electronic shuttering, anti-bloom

1997-02-13

1999-11-16

Ngo, Ngar V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257230, 257234, 257239, 257292, 257294, 257435, 257440, 257445, H01L 27148, H01L 29768

Patent

active

059862971

ABSTRACT:
An active pixel sensor architecture comprising a semiconductor substrate having a plurality of pixels formed, thereon, incorporating microlens and lightshields into the pixel architecture. Each of the pixels further comprising: a photodetector region upon which incident light will form photoelectrons to be collected as a signal charge; a device for transferring the signal charge from the photodetector region to a charge storage region that is covered by a light shield; a sense node that is an input to an amplifier; the sense node being operatively connected to the signal storage region. The pixel architecture facilitates symmetrical design of pixels which allows for incorporation of light shield and microlens technology into the design.

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R.H. Nixon, S.E. Kemeny, C.O. Staller, E.R. Fossum, "128+128 CMOS Photodiode-type Active Pixel Sensor with On-chip Timing, Control and Signal Chain Electronics" Proceedings of the SPIE vol. 2415, Charge-Coupled Devices and Solid-State Optical Sensors V, paper 34 (1995).
H.S. Philip Wong, "Technology and DDevice Scaling Considerations for CMOS Imagers." IEEE Solid State Circuits Technology Workshop on CMOS Imaging Technology, Feb. 7, 1996, San Francisco, CA

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