Collector tailored structures for integration of binary...

Details Collector tailored structures for integration of binary... Collector tailored structures for integration of binary...

2006-04-19

2008-12-09

Pham, Hoai v (Department: 2892)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S370000, C257SE21608

Reexamination Certificate

active

07462546

ABSTRACT:
A bipolar transistor is formed in an integrated BiCMOS process. A buried layer is formed in a semiconductor body. An intrinsic dilute mask is formed over the buried layer that covers at least a portion of a selected region of a target deep well region. The intrinsic dilute mask is employed to implant a dopant into the target deep well region to form a deep well region with the selected region having a lowered dopant concentration. The lowered dopant concentration can yield a higher breakdown voltage for the bipolar device. The intrinsic dilute mask mitigates implantation within the selected region.

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