Collector of a bipolar transistor compatible with MOS technology

Details Collector of a bipolar transistor compatible with MOS technology Collector of a bipolar transistor compatible with MOS technology

1992-02-18

1994-03-29

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257378, 257518, 257588, 257755, H01L 2702, H01L 2904

Patent

active

052987795

ABSTRACT:
A bipolar transistor comprising a semiconductor substrate, of a first conductivity type, a retrograde well serving as the collector and having a second conductivity type opposite to the first, a base active region having a first conductivity type, a region serving as an emitter of the second conductivity type, the regions being bordered on either side by insulating regions. According to the invention, the transistor includes at least one second conductivity type zone serving as the collector contact, located in a region of the retrograde well at a distance from the base zone and extending away from said base zone no further than level with the insulating zone. The invention is applicable to making BI-MOS or BI-CMOS circuits.

REFERENCES:
patent: 4665424 (1987-05-01), Hirao
patent: 4782030 (1988-11-01), Katsumata et al.
patent: 4835596 (1989-05-01), Werner
patent: 4980304 (1990-12-01), Chin et al.
patent: 5065209 (1991-11-01), Spratt et al.
IEEE Transactions On Electron Devices, vol. 33, No. 3, Mar. 1986, New York, pp. 345-353; Fang-Shi J. Lai: "Design and Characteristics of a Lightly Doped Drain (LDD) Device Fabricated with Self-Aligned Titanium Disilicide".

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