Collector arrangement for magnetotransistor

Details Collector arrangement for magnetotransistor Collector arrangement for magnetotransistor

1993-06-01

1994-06-21

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

257421, 257423, 257425, 257427, 324252, H01L 2722

Patent

active

053230507

ABSTRACT:
A collector arrangement for a magnetotransistor (10, 25, 30) and a method for making the magnetotransistor (10, 25, 30). A portion of a semiconductor substrate (11) is doped to form a base region (13). The base region is doped to form an emitter region (16, 26, 36) and a collector region (17, 27, 37) such that the collector region (17, 27, 37) surrounds and is spaced apart from the emitter region (16, 26, 36). Collector contacts (C.sub.1 -C.sub.8 and C.sub.5 '-C.sub.8 ', C.sub.13 -C.sub.16) are symmetrically formed in the collector region (17, 27, 37). In a three-dimensional magnetotransistor (10, 25) the collector contacts include split-collector contacts (C.sub.5 -C.sub.8 and C.sub.5 '-C.sub.8 ').

REFERENCES:
patent: 4700211 (1987-10-01), Popovic et al.
patent: 4939563 (1990-07-01), Fang et al.
patent: 5099298 (1992-03-01), Nakamura et al.
patent: 5179429 (1993-01-01), Ristic
Ristic et al., "3-D Magnetic Field Sensor Realized as a Magnetotransistor in CMOS Technology," Sensors and Actuators, A21-A23, 1990, pp. 770-775.
Ristic et al., "2-D Integrated Magnetic Field Sensor in CMOS Technology," Bipolar Circuits and Technology Meeting, Minneapolis, MN, U.S.A., 1989, pp. 701-704.

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