Cold substrate growth technique for silicon-on-ceramic

Details Cold substrate growth technique for silicon-on-ceramic Cold substrate growth technique for silicon-on-ceramic

1979-11-19

1981-02-17

Hoffman, James R.

Coating processes

Electrical product produced

Photoelectric

427 75, 427265, 427266, 427462, 4274432, B05D 118, B05D 512, B05D 136

Patent

active

042515700

ABSTRACT:
The present invention is an improvement to the method of growing silicon films on a substrate by bringing the substrate in contact with molten silicon. The improved growth technique may be classified as an asymmetric mode of growth of silicon on the substrate and is characterized by the substrate being maintained at a lower temperature than the solidification of silicon in the area of the substrate where the silicon layer growth is taking place, that is in the area of the liquid-solid interface. The lower temperature of the substrate, say 5.degree.-10.degree. C. below the freezing temperature of silicon, causes the liquid-solid interface to be tilted to be nearly parallel to the substrate surface but inclined at a reentrant angle, so that the leading edge of the crystallization front is on the substrate. This provides an advantage of increased growth speed.

REFERENCES:
patent: 4112135 (1978-09-01), Heaps et al.
patent: 4128680 (1978-12-01), Heaps et al.
patent: 4137355 (1979-01-01), Heaps et al.

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