Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1998-03-10
2000-02-01
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
313309, 313336, 313351, H01L 2906
Patent
active
060205954
ABSTRACT:
A cold electron emission device including an emitter having a protrusion having a sharp tip and disposed at a first end of a semiconductor thin film formed on an insulation substrate; a cathode electrode disposed at a second end of the semiconductor thin film; at least one gate electrode disposed between the emitter and the cathode electrode for controlling a current flowing through the semiconductor thin film; an insulating layer arranged to cover the semiconductor thin film, cathode electrode and gate electrode, except for the emitter; and a lead electrode arranged on the insulating layer such that it surrounds the tip of the emitter, thereby making it possible to achieve a cold electron emission device with reliable current stability.
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Itoh Junji
Kanemaru Seigo
Baumeister Bradley William
Director--General of Agency of Industrial Science and Technology
Jackson, Jr. Jerome
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