Semiconductor device manufacturing: process – Electron emitter manufacture
Reexamination Certificate
2007-01-30
2007-01-30
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Electron emitter manufacture
C438S022000, C438S091000, C257SE21008, C257S053000
Reexamination Certificate
active
11105503
ABSTRACT:
A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is formed on the insulating layer. The support member is irradiated with exposure light from a back surface side of the support member through the hole as a mask for exposure. An electron-emitting-portion-forming-layer composed of a photosensitive material is formed at least inside the opening portion. The support member is irradiated with exposure light from a back surface side of the support member through the hole as a mask for exposure.
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Muroyama Masakazu
Saito Ichiro
Shimamura Toshiki
Toyota Motohiro
Kananen Ronald P.
Nhu David
Rader & Fishman & Grauer, PLLC
Sony Corporation
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