Cold cathode field emission device and process for the...

Semiconductor device manufacturing: process – Electron emitter manufacture

Reexamination Certificate

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Reexamination Certificate

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06900066

ABSTRACT:
A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is formed on the insulating layer. The support member is irradiated with exposure light from a back surface side of the support member through the hole as a mask for exposure. An electron-emitting-portion-forming-layer composed of a photosensitive material is formed at least inside the opening portion. The support member is irradiated with exposure light form a back surface side of the support member through the hole at a mask for exposure.

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patent: 6465941 (2002-10-01), Kubota et al.
patent: 6580223 (2003-06-01), Konishi et al.
patent: 6771236 (2004-08-01), Konishi et al.
patent: 03-246851 (1991-11-01), None
patent: 07-320629 (1995-12-01), None
patent: 07-320636 (1995-12-01), None
patent: 2000-215792 (2000-08-01), None
patent: 2000-285796 (2000-10-01), None

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