COL-TSOP with nonconductive material for reducing package...

Details COL-TSOP with nonconductive material for reducing package... COL-TSOP with nonconductive material for reducing package...

2006-02-15

2010-06-01

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

C257S676000, C257S686000, C257S692000, C257S701000, C257S783000, C438S123000

Reexamination Certificate

active

07728411

ABSTRACT:
A method of fabricating a semiconductor package, and a semiconductor package formed thereby, are disclosed. The semiconductor package may include one or more semiconductor die having die attach pads along a single side. The leadframe may include a plurality of elongated electrical leads, extending from a first side of the leadframe, beneath the die, and terminating at a second side of the leadframe adjacent to the bond pads along the single edge of the die. The leadframe may further include a dielectric spacer layer on the elongated leads. Spacing the semiconductor die from the elongated leads using the spacer layer reduces the parasitic capacitance and/or inductance of the semiconductor package formed thereby.

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