Codoped direct-gap semiconductor scintillators

Details Codoped direct-gap semiconductor scintillators Codoped direct-gap semiconductor scintillators

2008-07-29

2008-07-29

Koslow, C. Melissa (Department: 1793)

Compositions

Inorganic luminescent compositions

Zinc or cadmium containing

C252S30160S, C252S06230Q, C252S06230R, C257S043000, C257S102000, C257S078000

Reexamination Certificate

active

11382883

ABSTRACT:
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

REFERENCES:
patent: 3027329 (1962-03-01), Grimmeiss et al.
patent: 3602753 (1971-08-01), Evans et al.
patent: 5976412 (1999-11-01), Itoh et al.
patent: 6674098 (2004-01-01), Niki et al.
patent: 7048872 (2006-05-01), Derenzo et al.
patent: WO 01/08229 (2001-02-01), None

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