Codoped direct-gap semiconductor scintillators

Compositions – Inorganic luminescent compositions – Zinc or cadmium containing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C252S30160S, C252S06230Q, C252S06230R, C257S043000, C257S102000, C257S078000

Reexamination Certificate

active

07404913

ABSTRACT:
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

REFERENCES:
patent: 3027329 (1962-03-01), Grimmeiss et al.
patent: 3602753 (1971-08-01), Evans et al.
patent: 5976412 (1999-11-01), Itoh et al.
patent: 6674098 (2004-01-01), Niki et al.
patent: 7048872 (2006-05-01), Derenzo et al.
patent: WO 01/08229 (2001-02-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Codoped direct-gap semiconductor scintillators does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Codoped direct-gap semiconductor scintillators, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Codoped direct-gap semiconductor scintillators will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2766924

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.