Cobalt silicide schottky diode on isolated well

Details Cobalt silicide schottky diode on isolated well Cobalt silicide schottky diode on isolated well

2005-10-21

2009-02-03

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

In integrated structure

C257SE29338, C438S570000

Reexamination Certificate

active

07485941

ABSTRACT:
A Schottky diode is formed on an isolated well (e.g., a P-well formed in a buried N-well), and utilizes cobalt silicide (CoSi2) structures respectively formed on heavily doped and lightly doped regions of the isolated well to provide the Schottky barrier and backside (ohmic) contact structures of the Schottky diode. The surrounding buried N-well is coupled to a bias voltage. The Schottky barrier and backside contact structures are separated by isolation structures formed using polycrystalline silicon, which is used to form the gate structure of CMOS FETs, in order to minimize forward resistance. Heavily doped drain (HDD) diffusions and lightly doped drain (LDD) diffusions, which are used to form source and drain diffusions of the FET, are utilized to form a suitable contact diffusion under the backside contact silicide.

REFERENCES:
patent: 5347161 (1994-09-01), Wu et al.
patent: 6825073 (2004-11-01), Wu
patent: 2003/0181011 (2003-09-01), Curro et al.
patent: 2004/0012066 (2004-01-01), Dietl et al.

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