Cobalt silicide metallization for semiconductor integrated circu

Details Cobalt silicide metallization for semiconductor integrated circu Cobalt silicide metallization for semiconductor integrated circu

1981-08-27

1983-04-05

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29591, 427 88, 357 67, H01L 21285

Patent

active

043786286

ABSTRACT:
In order to form MOSFET structures, a cobalt layer (16) is deposited and sintered, at about 400.degree. C. to 500.degree. C., on a patterned semiconductor wafer having exposed polycrystalline (14) or monocrystalline (11) silicon portions, as well as exposed oxide (15 or 25) portions. The cobalt reacts with exposed surfaces of the silicon portions and forms thereat such compounds as cobalt monosilicide (CoSi) or di-cobalt silicide (C0.sub.2 Si), or a mixture of both. The unreacted cobalt is selectively removed, as by selective etching in a suitable acid bath. A heat treatment at about 700.degree. C. or more, preferably in an oxidizing ambient which contains typically about 2 percent oxygen, converts the cobalt compound(s) into relatively stable cobalt disilicide (CoSi.sub.2). Subsequently, deposition of an in situ doped layer (33) of polycrystalline silicon (polysilicon) on the cobalt disilicide contacting the monocrystalline silicon portions--followed by gettering, deposition of a layer (34) of aluminum, and standard etch-patterning of the aluminum and polysilicon layers--completes the metallization of the desired MOSFET structures on the silicon wafer.

REFERENCES:
patent: 3617824 (1971-11-01), Shinoda et al.
patent: 4109372 (1978-08-01), Geffken
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4283439 (1981-08-01), Higashinakagawa et al.
patent: 4285761 (1981-08-01), Fatula et al.
patent: 4339869 (1982-07-01), Reihl et al.
G. J. van Gurp and C. Langereis, "Cobalt Silicide Layers on Si. I. Structure and Growth," Journal of Applied Physics, vol. 46, No. 10, pp. 4301-4307 (1975).
R. K. Watts et al., "Electron Beam Lithography for Small MOSFETs," IEDM Digest (Wash., D.C., 1980), pp. 772-775.

Affiliated with

Also associated with

Rating

Cobalt silicide metallization for semiconductor integrated circu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cobalt silicide metallization for semiconductor integrated circu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cobalt silicide metallization for semiconductor integrated circu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-562181