Cobalt nitride layers for copper interconnects and methods...

Details Cobalt nitride layers for copper interconnects and methods... Cobalt nitride layers for copper interconnects and methods...

2011-07-05

2011-07-05

Gonzalez, Porfirio Nazario (Department: 1621)

Organic compounds -- part of the class 532-570 series

Organic compounds

Heavy metal containing

C427S248100, C427S255394, C106S001250

Reexamination Certificate

active

07973189

ABSTRACT:
An interconnect structure for integrated circuits incorporates a layer of cobalt nitride that facilitates the nucleation, growth and adhesion of copper wires. The cobalt nitride may deposited on a refractory metal nitride or carbide layer, such as tungsten nitride or tantalum nitride, that serves as a diffusion barrier for copper and also increases the adhesion between the cobalt nitride and the underlying insulator. The cobalt nitride may be formed by chemical vapor deposition from a novel cobalt amidinate precursor. Copper layers deposited on the cobalt nitride show high electrical conductivity and can serve as seed layers for electrochemical deposition of copper conductors for microelectronics.

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