Coherent light generators – Particular beam control device – Q-switch
Reexamination Certificate
2005-01-04
2005-01-04
Ip, Paul (Department: 2828)
Coherent light generators
Particular beam control device
Q-switch
C372S011000
Reexamination Certificate
active
06839362
ABSTRACT:
A saturable absorber Q-switch includes a monocrystalline lattice having the formula Mg1-xCoxAlyOzwhere x is greater than 0 and less than 1, y is greater than 2 and less than about 8, and z is between about 4 and 13. The lattice has tetrahedral and octahedral positions, and most of the magnesium and cobalt occupy tetrahedral positions. In one embodiment, the molar ratio of aluminum to the combined amount of magnesium and cobalt in the monocrystalline lattice can be controlled during growth of the monocrystalline lattice to thereby form a saturable absorber Q-switch that exhibits a4T1spectrum for the cobalt ion of at least about 1544 μm. In another embodiment, a laser system, such as an Er:Yr:glass laser system, includes a saturable absorber Q-switch that includes a monocrystalline lattice wherein the molar ratio of aluminum to the combined amounts of magnesium and cobalt exceeds 2:1, and preferably is about 6:1, and wherein essentially all of the magnesium and cobalt components of the monocrystalline occupy tetrahedral positions of the lattice.
REFERENCES:
patent: 3655439 (1972-04-01), Seiter
patent: 3658586 (1972-04-01), Wang
patent: 3796597 (1974-03-01), Porter et al.
patent: 3883313 (1975-05-01), Cullen et al.
patent: 4177321 (1979-12-01), Nishizawa
patent: 4627064 (1986-12-01), Auzel et al.
patent: 4963520 (1990-10-01), Yoo et al.
patent: 5530267 (1996-06-01), Brandle, Jr. et al.
patent: 5557624 (1996-09-01), Stultz et al.
patent: 5654973 (1997-08-01), Stultz et al.
patent: 5741724 (1998-04-01), Ramdani et al.
patent: 5802083 (1998-09-01), Birnbaum
patent: 5850410 (1998-12-01), Kuramata
patent: 5982796 (1999-11-01), Kokta et al.
patent: 6023479 (2000-02-01), Thony et al.
patent: 6104529 (2000-08-01), Brandle, Jr. et al.
patent: 6366596 (2002-04-01), Yin et al.
patent: 0 148 656 (1985-07-01), None
Yumashev, K.V., “Saturable absorber Co+2: MgAI204 crystal for Q switching of 1.34 Nd3: YaIO3 and 1.54 Er3+:glass laser,” Applied Optics, 38(30):6343-6346 (Oct. 20, 1999).*
Haisma, J., et al., “Lattice-Constant-Adaptable Crystallographics,”Journal of Crystal Growth,102:979-993 (1990) no month.
Nikishin, S.A., et al., “Gas Source Molecular Beam Epitaxy of GaN with Hydrazine on Spinel Substrates,”Applied Science Letters,American Institute of Physics, 72:2361-2363 (1998) no month.
Tamura, K., et al., “Epitaxial Growth of ZnO Films on Lattice-Matched SoA1MgO4(0001) Substrates,”Journal of Crystal Growth,214-215:59-62 (2000) no month.
Wyon, C., et al., “Czochralski Growth and Optical Properties of Magnesium-Alminum Spinel Doped with Nickel,”Journal of Crystal Growth,79:710-713 (1986) no month.
Kuleshov, N.V., et al., “Co-Doped Spinels: Promising Materials for Solid State Lasers,”SPIE 2138:175-182, (1994) no month.
Kuleshov. N.V., et al., “Absorption and Luminescence of Tetrahedral Co2+ion in MgAl2O4,”Journal of Luminescence, 55:265-269, (1993) no month.
Yumashev, K.V., et al., “Passive Q-Switching of 1.34-μm Neodymium Laser Using Co2+:LiGa5and Co2+:MgAl2O4,” Poster presented at CLEO/Europe-IQEC Technical Program, Sep. 2000. IEEE Conference Digest for 2000 Conference on Laser and Electro-Optics Europe, Sep. 2000, Poster No. CTuK39.
Yumashev, K.V., et al., “Co2+-Doped Spinels Saturable Absorber Q-Switches for 1.3-1.6 μm Solid State Lasers,”OSA Trends in Optics and Photonics. Advanced Solid State Lasers, 34:236-239, Proceedings of Topical Meeting on Advancd Solid-State Laser (ASSL 2000) no month.
Tsuchiya, T., et al., “Epitaxial growth of InN films on MgAl2O4(1 1 1 ) substrates,”J. of Crystal Growth 220:185-190 (2000) no months.
Efimov, A.N., et al., “On an Unusual Azimuthal Orientation Relationship in the System Gallium Nitride Layer on Spinel Substrate,”Crystallography Reports, 45(2):312-317 (2000) no months.
Yang, H.F. et al., “Microstructure evolution of GaN buffer layer on MgAl2O4substrate,”J. of Crystal Growth 193:478-483 (1998) no months.
Ohsato, H., et al., “Epitaxial orientation and a growth model of (0 0 1) GaN thin film on (1 1 1) spinel substrate,”J. of Crystal Growth 189/190:202-207 (1998) no months.
Duan, S., et al., “MOVPE growth of GaN and LED on (1 1 1) MgAl2O4,”J. of Crystal Growth 189/190:197-201 (1998) no months.
Nikishin, S.A., et al., “Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates,”App. Phys. Lett. 72(19):2361-2363 (1998).
Sun, C.J., et al., “Mg-doped green light emitting diodes over cubic (1 1 1) MgAl2O4substrates,”App. Phys. Lett. 70(11):1444-1446 (1997) no month.
Efimov, A.N., et al., “Symmetry constraints and epitaxial growth on non-isomorphic substrate,”Thin Solid Films 260:111-117 (1995) no month.
Kruger, M.B., et al., “Equation of state of MgAl2O4spinel to 65 GPa,”Physical Review B Condensed Matter, Third Series 56(1):1-4 (1997) no month.
George, T., et al., “Novel symmetry in the growth of gallium nitride on magnesium aluminate substrates,”Appl. Phys. Lett. 68(3):337-339 (1996) no month.
Sun, C.J., et al., “Deposition of high quality wurtzite Gan films over cubic (1 1 1) MgAl2O4substrates using low pressure and metalorganic chemical vapor deposition,”Appl. Phys. Lett. 68(8):1129-1131 (1996) no month.
Nakamura, S., et al., “Characteristics of InGaN multi-quantum-well structure laser diodes,”Appl. Phys. Lett 68(23):3269-3271 (1996) no month.
Kuramata, A., et al., “Properties of GaN Epitaxial Layer Grown on (1 1 1) MgAl2O4Substrate,”Solid-State Electronics 41(2):251-254 (1997) no month.
Khan, M.A., et al., “Cleaved cavity optically pumped InGaN-Gan laser grown on spinel substrates,”Appl. Phys. Lett. 69(16):2418-2420 (1996) no months.
Tempel, A. and Seifert, W., “Nachweis von Stapelfehlern in GaN-Exitaxieschicten mittels Elektronenbeugung,”Kristall und Technik 10(7):741-746 (1975) no months.
Gritsyna, V.T., et al., “Structure and Electronic States of Defects in Spinel of Different Compositions MgO.nAl2O3:Me,”J. Am. Ceram. Soc. 82(12):3365-3373 (1999) no months.
Tempel, A., et al., “Zur Epitaxie von Galliumnitrid auf nichtstöchiometrischem Spinell im System GaC1/NH3/He,”Kristall und Technik 10(7):747-758 (1975) no months.
E. Hellman, “Exotic and Mundane Substrates for Gallium Nitride Heteroepitaxy,” Bell Laboratories/Lucent Technologies (no date given) no months no year.
Sheldon, R.I., et al., “Cation Disorder and Vacancy Distribution in Nonstoichiometric Magnesium Aluminate Spinel, MgO.xAl2O3,”J. Am Ceram. Soc. 82(12):3293-3298 (1999) no month.
K.V. Yumashev, “Saturable absorber Co2+:MgAl2O4crystal for Q switching of 1.34-μm Nd3+:YAlO3and 1.54-μm Er3+: glass lasers,”Applied Optics 38(30):6343-6346 (1999) no month.
T.E. Mitchell, “Dislocations and Mechanical Properties of MgO-Al2O3Spinel Single Crystals,”J. Am. Ceram. Soc. 82(12):3305-3316 (1999) no month.
Camargo, M.B., et al., “Co2+:Y3Sc2Ga3O12(YSGG) Passive Q-switch for Infrared Erbium Lasers,” submitted to LEOS in 1994 no month.
Mikhailov, V.P., et al., “Passive Q-switch performance at 1.3img id="CUSTOM-CHARACTER-00001" he="2.46mm" wi="2.12mm" file="US06839362-20050104-P00003.TIF" alt="custom character" img-content="character" img-format="tif" ?(1.5μ) and nonlinear spectroscopy of Co2+: MgAl2O4and Co2+: LaMgAl11O19crystals,”OSA TOPS vol. 26 Advanced Solid-State Lasers,pp. 317-324 (1999) no month.
Yumashev. K.V., “Saturable absorber Co2+ :MgAl2O4crystal for Q switching of 1.34-μm Nd3: YAIO3and 1.54-μm Er3+: glass lasers,”Applied Optics, 38(30):6343-6346 (Oct. 20, 1999).
Stulz, R.D., et al., “Divalent Uranium and Cobalt Saturable Absorber Q-switches at 1.5 μm,”OSA Proceedings on Advanced Solid-State Lasers, 24:460-464 (1995) no month.
Birnbaum, M., et al., &#
Cooke Jeffrey A.
Goodnight Kevin L.
Kokta Milan R.
Peressini Dennis L.
Field, III Thomas G.
Ip Paul
Saint-Gobain Ceramics & Plastics, Inc.
Toler Larson & Abel, LLP
Vy Hung T
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