Coating silicon pellets with dopant for addition of dopant...

Details Coating silicon pellets with dopant for addition of dopant... Coating silicon pellets with dopant for addition of dopant...

2006-11-14

2006-11-14

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S018000, C117S019000, C117S023000, C117S033000, C117S932000, C427S215000, C427S220000

Reexamination Certificate

active

07135069

ABSTRACT:
An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in an aqueous solution comprising a boric acid and polyvinyl alcohol, and (2) heating the solution so as to evaporate water and form a polymerized polyvinyl alcohol coating containing boron on the shot. A precise amount of this coated shot may then be mixed with a measured quantity of intrinsic silicon pellets and the resulting mixture may then be melted to provide a boron-doped silicon melt for use in growing p-type silicon bodies that can be converted to substrates for photovoltaic solar cells.

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patent: 6740158 (2004-05-01), Piwczyk

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