Coating of III-V and II-VI compound semiconductors

Metal treatment – Compositions – Heat treating

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148187, 148189, 148191, H01L 21223, H01L 21383

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active

046344748

ABSTRACT:
Proposed is a method of fabricating III-V and II-VI compound semiconductors and a resulting product where there is formed on the surface a coating which can function as a diffusion mask and/or a passivation layer. The coating is a silicon layer deposited by a method which does not damage the semiconductor surface.

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