Coating infra red transparent semiconductor material

Details Coating infra red transparent semiconductor material Coating infra red transparent semiconductor material

1981-08-14

1983-11-01

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204192R, 428408, C23C 1500

Patent

active

044129033

ABSTRACT:
A shaped element of germanium or silicon is coated with a layer of hard infra red transparent carbon. The carbon is deposited on the element, used as a cathode, in a glow discharge charge chamber by applying a D.C. voltage to a hydrocarbon gas at a pressure of e.g. 10.sup.-1 to 10.sup.-2 Torr. Prior to depositing the carbon the element may be heated and cleaned using argon ion bombardment. Layers of germanium and silicon may also be deposited using the gases germane and silane respectively.

REFERENCES:
patent: 3840451 (1974-10-01), Golyanov et al.
patent: 3854979 (1974-12-01), Rossi
patent: 4060660 (1977-11-01), Carlson et al.
patent: 4173522 (1979-11-01), Pulker et al.
Holland et al., (A) Thin Solid Films 58 (1979), pp. 107-116.
Holland et al., (B) Thin Solid Films 48 (1978), pp. 121-125.
Marinkovic et al., Carbon, 14 (1976), pp. 329-331.
McKenzie et al., Solar Energy Materials 6 (1981), pp. 97-106.
Sathyamoorthy et al., Thin Solid Films 87 (1982), pp. 33-42.

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