Coating for passivating a semiconductor device

Details Coating for passivating a semiconductor device Coating for passivating a semiconductor device

1975-10-24

1978-04-25

Miller, Jr., Stanley D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 52, 357 56, 427 93, 427 95, H01L 2934

Patent

active

040866149

ABSTRACT:
A semiconductor device is described having a body of silicon semiconductor material containing at least one PN junction therein, which PN junction terminates at a peripheral edge surface of the body. A double-layer passivating and protective coating is applied to the edge of the body covering the portion where the PN junction emerges. The inner layer consists of SiO.sub.2 and a predetermined percentage of Al.sub.2 O.sub.3. The outer layer consists of SiO.sub.2 and a predetermined percentage of Al.sub.2 O.sub.3 which exceeds the percentage of Al.sub.2 O.sub.3 in the inner layer.

REFERENCES:
patent: 3386163 (1968-06-01), Brennemann et al.
patent: 3479237 (1969-11-01), Bergh et al.
patent: 3481781 (1969-12-01), Kern
patent: 3511703 (1970-05-01), Peterson
patent: 3728167 (1973-04-01), Garber
patent: 3730766 (1973-05-01), Nishimatsu et al.
patent: 3767463 (1973-10-01), Aboaf et al.
patent: 3922709 (1975-11-01), Wallmark et al.

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