Coating for optical devices

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350166, G02B 110

Patent

active

047492554

ABSTRACT:
Disclosed is a device including a surface coating for passivation or anti-reflection, and a method of manufacture. The coating comprises ZrO.sub.2 doped with yttrium, magnesium or calcium. The doped ZrO.sub.2 is preferably deposited on the device surface by electron-beam evaporation from a single crystal source of ZrO.sub.2 and Y.sub.2 O.sub.3, MgO or CaO.

REFERENCES:
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patent: 3984581 (1976-10-01), Dobler et al.
patent: 4327129 (1982-04-01), Sepp
Greene et al., "Growth and Characterization of Doped ZrO.sub.2 and CeO.sub.2 Films Deposited by Bias Sputtering", Journal of Vacuum Science and Technology, vol. 14, No. 1, Jan.-Feb. 1977, pp. 177-180.
Greene et al., "Morphological and Electrical Properties of rf Sputtered Y.sub.2 O.sub.3 -doped ZrO.sub.2 Thin Films", Journal of Vacuum Science and Technology, v. 13, No. 1, Jan.-Feb. 1976, pp. 72-75.
Chin et al., "Al.sub.2 O.sub.3 as an Antireflection Coating for InP/InGaAsP LEDs", Journal of Vacuum Science and Technology, B, vol. 1, No. 1, Jan.-Mar. 1983, pp. 72-73.
Handbook of Thin Film Technology, L. I. Maisset & R. Gilang, Editors, McGraw Hill Book Company (1970), pp. 1-50-1-54.
"Room Temperature CW Operation of Distributed-Feedback Buried-Heterostructure InGaAsP/InP Lasers Emitting at 1.57 .mu.m", Electronics Letters, vol. 17, Utaka et al., (Dec. 1981), pp. 961-962.
"V-Grooved-Substrate Buried Heterostructure InGaAsP/InP Laser Diodes," Fujitsu Sci. Tech. J., vol. 18, H. Imai et al. (Dec. 1982), pp. 541-561.
"High Power InGaAsP Edge-Emitting LEDs for Single-Mode Optical Communication Systems", Electronics Letters, vol. 21, Olshansky et al., (Aug. 15, 1985), pp. 730-731.
"High-Power Multiple-Emitter AlGaAs Superluminescent Diodes", Applied Physics Letters, vol. 47, Paoli et al. (Sep. 1985), pp. 450-452.

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