Stock material or miscellaneous articles – Structurally defined web or sheet – Including components having same physical characteristic in...
Patent
1997-06-03
2000-02-22
Turner, Archene
Stock material or miscellaneous articles
Structurally defined web or sheet
Including components having same physical characteristic in...
204192, 20419215, 20419226, 427162, 428216, 428336, 428428, 428432, 428697, 428699, 428701, C23C 1408
Patent
active
060277920
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
The present invention relates to a coating film excellent in resistance to corrosive gas and plasma, a method for producing the same, and technology utilizing the same. More specifically, the present invention relates to a coating film excellent in resistance to halogen gases such as chlorine, bromine, fluorine and the like, and/or gases containing such halogen elements (hereinafter, referred to as a halogen-containing gas in some cases), halogen-containing plasma generated by these kinds of halogen gases and/or halogen-containing gases; a laminated structure coated with the coating film such as a window material for a vacuum apparatus; and a method for producing the same.
BACKGROUND ART
As the elements in semiconductor devices have been highly-integrated, the interconnections in the elements are required to be arranged with high precision of submicron unit. In such elements, if fine particles and/or bacteria attach to the interconnections, the interconnections will be short-circuited, which will immediately cause product failure. Therefore, gas and wash water used in the manufacturing of semiconductor devices are required to have extremely high purity. It is also required to protect inner walls of vacuum chamber, components for reaction room such as electrodes and a gas introduction pipe from generation of impurity gas and fine particles.
Under such conditions, it is recommended that a vacuum chamber is made of stainless steel and aluminum alloy, because stainless steel and aluminum alloy could release only small amount of gas and has excellent corrosion resistance in general. However, even if the vacuum chamber is made of the stainless steel and aluminum alloy, it is difficult to avoid the corrosion by the halogen-containing gas used as a reaction gas or an etching gas and halogen-containing plasma generated from the halogen-containing gas. In an attempt to solve this problem, it has been suggested to form a coating film including TiN, AlN, Al.sub.2 O.sub.3 and the like as an essential material which exhibits excellent resistance to halogen-containing gas corrosion and halogen-containing plasma corrosion (see Japanese Utility Model Publication No. 61-13555, Japanese Laid-Open Patent Publication No. 1-312088, Japanese patent Publication No. 5-53871). As to the stainless steel, some technologies have been suggested to avoid its corrosion. For example, austenitic stainless steel is subjected to electrolytic polishing, and then is heated in oxidizing gas atmosphere. Accordingly, an amorphous oxide coating film is formed on the surface thereof, so that the surface releases only suppressed amount of gas (see Japanese Laid-Open Patent Publication No. 64-87760). In another technology, the content of non-metal inclusions is reduced to the value as small as possible, which may otherwise produce fine particles or may adsorb or release impurities (see Japanese Laid-Open Patent Publication No. 63-161145).
However, the properties of the coating film including TiN, AlN, Al.sub.2 O.sub.3 and the like as an essential material depend on its production conditions, and the resistance to halogen-containing gas corrosion greatly depends on the properties of the coating film. It is difficult to provide a coating film which always exhibits stable and excellent resistance to a hydrogen chloride gas, a hydrogen fluoride gas, which has extremely high corrosiveness, and halogen-containing plasma. In addition, the above-described technology for stainless steel cannot achieve sufficient corrosion resistance in such highly corrosive environment. When corrosion starts, various problems arise. For example, corrosion products adsorb and release the gas, and in addition, the products themselves turn into fine particles and attach to the inner surface of the vacuum apparatus or the surface of the semiconductor wafer treated therein. As a result, the inside the chamber and the surface of the semiconductor wafer are contaminated.
Next, among the processes of manufacturing of semiconductor devices, it is known that
REFERENCES:
patent: 4769291 (1988-09-01), Belkind et al.
patent: 5085926 (1992-02-01), Iida et al.
patent: 5170291 (1992-12-01), Szczyrbowski et al.
Hisamoto Jun
Ikeda Kouki
Itayama Katsuhiro
Onishi Takashi
Yamamoto Seigo
Kabushiki Kaisha Kobe Seiko Sho
Turner Archene
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