Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...
Reexamination Certificate
2004-03-31
2008-03-18
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
C257S310000, C257S578000, C257S632000, C257S758000, C257SE21261, C257SE21273, C524S588000, C524S056000, C524S057000, C524S058000, C528S010000, C528S032000, C528S038000
Reexamination Certificate
active
07345351
ABSTRACT:
The present invention relates to a coating composition for insulating film production, a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same, and more particularly to a coating composition for insulating film production having a low dielectric constant and that is capable of producing an insulating film with superior mechanical strength (elasticity), a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same. The coating composition of the present invention comprises an organic siloxane resin having a small molecular weight, and water, and significantly improves low dielectricity and mechanical strength of an insulating film.
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Choi Bum-Gyu
Kang Gwi-Gwon
Kang Jung-Won
Kim Byung-Ro
Kim Young-Duk
Erdem Fazli
LG Chem Ltd.
McKenna Long & Aldridge LLP
Purvis Sue A.
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