Coated stoichiometric silicon carbide

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427249, 427255, 4272552, 4272555, 427402, 428367, 428368, 428401, 428446, B32B 702, B32B 900

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043406360

ABSTRACT:
The invention relates to a surface treatment for stoichiometric silicon carbide. A carbon-rich silicon carbide layer is applied over the silicon carbide. In the case of the silicon carbide surface, the ratio of silicon to carbon in the carbon-rich layer varies from one at the silicon carbide interface to near zero in the interior of the carbon-rich layer to greater than zero and preferably 0.3 to 0.5 on the surface of the carbon-rich layer remote from the interface. A preferred method of making the silicon carbide layer is also presented.

REFERENCES:
patent: 3382113 (1968-05-01), Ebert et al.
patent: 3386866 (1968-06-01), Ebert et al.
patent: 3577285 (1971-05-01), Rutz
patent: 4068037 (1978-01-01), DeBolt et al.
patent: 4194028 (1980-03-01), Sirtl et al.

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