Coarse grain polycrystalline gallium antimonide thermophotovolta

Details Coarse grain polycrystalline gallium antimonide thermophotovolta Coarse grain polycrystalline gallium antimonide thermophotovolta

1999-09-01

2000-05-02

Chapman, Mark

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136262, 136264, 136265, H01L 3100

Patent

active

060575077

ABSTRACT:
A TPV cell apparatus with a base region of GaSb crystals. The GaSb crystals are of varying orientations and joined at grain boundaries. A surface region is provided on the GaSb crystals. The GaSb crystals are Tellurium doped N-type GaSb and the surface region is thin Zinc doped P-type GaSb cells. The surface region faces an infrared source. A bus region is connected to a metal grid connected which is in contact with the surface region of the cell. A continuous metal layer is in contact with the GaSb crystals. A multilayer coating is provided on a front side of the cell. The multilayer coating forms an infrared filter for transmitting convertible infrared energy to the cell and for reflecting as much of non-convertible infrared energy back to the IR source as possible. A TPV generator may be provided with the TPV cells.

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