Co-planar barrier-type charge coupled device with enhanced stora

Details Co-planar barrier-type charge coupled device with enhanced stora Co-planar barrier-type charge coupled device with enhanced stora

1977-08-26

1982-12-21

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 91, 307221D, 365183, H01L 2978, G11C 1928, G11C 1134

Patent

active

043652611

ABSTRACT:
A charge coupled device is disclosed which includes a plurality of stages having increased charge storage capacity and decreased leakage current. Each stage is comprised of a semiconductor substrate of a first-type conductivity having a first surface. An insulating layer of uniform thickness lies on the first surface. A charge transfer channel extends through each stage. Phase electrodes lie on the insulating layer transversely to the channel. The semiconductor substrate under each phase electrode is divided into a barrier region and an adjacent well region bounded by the channel. A shallow dopant layer of the first-type conductivity lies in each of the barrier regions relatively near to the first surface. A buried channel dopant layer of a second-type conductivity lies in the well regions and the barrier regions under and relatively near to the shallow first-type conductivity dopant layer. Additionally, an enhanced first-type conductivity dopant layer lies in the well regions and the barrier regions under and relatively near to the buried channel dopant layer of second-type conductivity.

REFERENCES:
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patent: 3796932 (1974-03-01), Amelio et al.
patent: 3852799 (1974-12-01), Walden
patent: 4024514 (1977-05-01), Elmer et al.
patent: 4032952 (1977-06-01), Ohba et al.
patent: 4035906 (1977-07-01), Tasch et al.
patent: 4047215 (1977-09-01), Frye et al.
patent: 4060738 (1977-11-01), Tasch et al.
patent: 4103347 (1978-07-01), Barton
patent: 4110777 (1978-08-01), Esser et al.

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