Co-doping for fermi level control in semi-insulating Group...

Details Co-doping for fermi level control in semi-insulating Group... Co-doping for fermi level control in semi-insulating Group...

2006-09-18

2008-11-11

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Graded composition

C438S724000, C438S727000, C438S285000, C438S583000, C438S604000

Reexamination Certificate

active

07449353

ABSTRACT:
Semi-insulating Group III nitride layers and methods of fabricating semi-insulating Group III nitride layers include doping a Group III nitride layer with a shallow level p-type dopant and doping the Group III nitride layer with a deep level dopant, such as a deep level transition metal dopant. Such layers and/or method may also include doping a Group III nitride layer with a shallow level dopant having a concentration of less than about 1×1017cm−3and doping the Group III nitride layer with a deep level transition metal dopant. The concentration of the deep level transition metal dopant is greater than a concentration of the shallow level p-type dopant.

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