Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Reexamination Certificate
2011-06-07
2011-06-07
Hendrickson, Stuart (Department: 1736)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
C423S447300, C423S44500R, C427S122000, C204S192140, C502S104000
Reexamination Certificate
active
07956345
ABSTRACT:
A method is provided for growth of carbon nanotube (CNT) synthesis at a low temperature. The method includes preparing a catalyst by placing the catalyst between two metal layers of high chemical potential on a substrate, depositing such placed catalyst on a surface of a wafer, and reactivating the catalyst in a high vacuum at a room temperature in a catalyst preparation chamber to prevent a deactivation of the catalyst. The method also includes growing carbon nanotubes on the substrate in the high vacuum in a CNT growth chamber after preparing the catalyst.
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A self-assembled synthesis of carbon nanotubes for interconnects Zexiang Chen et al 2006 Nanotechnology 17 1062.
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Miao Zhonglin
Nai Mui Hoon
Wang Shanzhong
Hendrickson Stuart
Jorgenson Lisa K.
Munck William A.
Rump Richard M
STMicroelectronics Asia Pacific Pte. Ltd.
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