CMP slurry composition and a method for planarizing...

Details CMP slurry composition and a method for planarizing... CMP slurry composition and a method for planarizing...

2006-04-18

2006-04-18

Marcheschi, Michael (Department: 1755)

Abrasive tool making process, material, or composition

With inorganic material

Clay, silica, or silicate

C106S003000, C438S692000, C438S693000

Reexamination Certificate

active

07029509

ABSTRACT:
The present invention relates to a CMP (chemical mechanical polishing) slurry composition and a method for planarizing a semiconductor device. The CMP composition comprises fumed silica, tetramethyl ammonium hydroxide, phosphates, fluorine compounds and deionized water. The method of planarizing comprises the steps of etching, subsequently laminating and polishing a semiconductor device by said CMP slurry composition.

REFERENCES:
patent: 5084071 (1992-01-01), Nenadic et al.
patent: 6471735 (2002-10-01), Misra et al.
patent: 2001/0037821 (2001-11-01), Staley et al.
patent: 0401147 (1995-12-01), None
patent: 0853335 (1998-07-01), None
patent: WO 98/47976 (1998-10-01), None

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