Compositions – Etching or brightening compositions – Inorganic acid containing
Reexamination Certificate
2007-01-24
2010-06-15
Vinh, Lan (Department: 1792)
Compositions
Etching or brightening compositions
Inorganic acid containing
C252S079100, C438S069000
Reexamination Certificate
active
07736530
ABSTRACT:
Disclosed is a CMP slurry in which a compound having a weight-average molecular weight of 30-500 and containing a hydroxyl group (OH), a carboxyl group (COOH), or both, is added to a CMP slurry comprising abrasive particles and water and having a first viscosity, so that the CMP slurry is controlled to have a second viscosity 5-30% lower than the first viscosity. Also disclosed is a method for polishing a semiconductor wafer using the CMP slurry. According to the disclosed invention, the agglomerated particle size of abrasive particles in the CMP slurry can be reduced, while the viscosity of the CMP slurry can be reduced and the global planarity of wafers upon polishing can be improved. Thus, the CMP slurry can be advantageously used in processes for manufacturing semiconductor devices requiring fine patterns and can improve the reliability and production of semiconductor devices through the use thereof in semiconductor processes.
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Cho Seung Beom
Kim Jang Yul
Kim Jong Pil
Nho Jun Seok
Oh Myoung Hwan
LG Chem Ltd.
McKenna Long & Aldridge LLP
Vinh Lan
LandOfFree
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