CMP process metrology test structures

Details CMP process metrology test structures CMP process metrology test structures

2007-03-06

2007-03-06

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

With measuring or testing

C438S692000, C438S633000, C257SE21237, C257SE21583

Reexamination Certificate

active

10956452

ABSTRACT:
A method for forming metrology structures for a CMP process is described. A trench edge is formed in a base material or stack of materials which are preferably deposited as part of the process of fabricating the production structures on the wafer. A covering film of a second material with preferably with contrasting SEM properties is deposited over the trench edge in the base material. During CMP the covering film is preferentially worn away at the edge revealing the base material. The width of the base material which has been revealed is a measure of the progress of the CMP. Since the base material and the covering material are preferably selected to have contrasting images in an SEM, a CD-SEM can be used to precisely measure the CMP progress.

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