CMP process

Details CMP process CMP process

2008-04-22

2008-04-22

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C216S052000, C257SE21230

Reexamination Certificate

active

11252933

ABSTRACT:
A method of forming a polished semiconductor structure comprises polishing a surface of a semiconductor structure by chemical mechanical polishing. Pressure applied to the surface is reduced during the polishing, or a rotation rate of a polishing surface relative to the surface is reduced during the polishing.

REFERENCES:
patent: 6309276 (2001-10-01), Tsai et al.
patent: 6391781 (2002-05-01), Ozawa et al.
patent: 6593208 (2003-07-01), Jin
patent: 6950716 (2005-09-01), Ward et al.
patent: 2003/0168627 (2003-09-01), Singh et al.
Abstract of: Kang, H-G., et al., “Dependence of pH, molecular weight, and concentration of surfactant in ceria slurry on saturated nitride removal rate in shallow trench isolation chemical mechanical polishing”., Japanese Journal of Applied Physics, vol. 44, No. 7A, pp. 4752-4758, (2005).
Encyclopedia of Chemical Technology, Kirk-Othmer, vol. 14, pp. 677-709, (1995).

Affiliated with

Also associated with

Rating

CMP process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMP process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMP process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3916512