Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2007-01-09
2007-01-09
Deo, Duy-Vu N (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
C438S690000, C438S691000, C438S692000, C438S693000
Reexamination Certificate
active
10610407
ABSTRACT:
The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least a portion of the noble metal layer to polish the substrate. The polishing component is selected from the group consisting of an abrasive, a polishing pad, or a combination thereof, and the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodites, periodates, peroxyacetic acid, organo-halo-oxy compounds, salts thereof, and combinations thereof. The chemical-mechanical polishing system has a pH of about 9 or less, and the oxidizing agent does not produce a substantial amount of elemental halogen. The invention also provides a method of polishing a substrate comprising a noble metal layer and a second layer using the aforementioned polishing system that further comprises a stopping compound.
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Bayer Benjamin P.
Brusic Vlasta
De Rege Thesauro Francesco
Cabot Microelectronics Corporation
Deo Duy-Vu N
Koszyk Francis
Omholt Thomas
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