CMP method for copper, tungsten, titanium, polysilicon, and...

Details CMP method for copper, tungsten, titanium, polysilicon, and... CMP method for copper, tungsten, titanium, polysilicon, and...

2007-07-24

2007-07-24

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S691000, C438S693000, C252S079100, C134S001200

Reexamination Certificate

active

10690623

ABSTRACT:
The invention relates to chemical mechanical polishing of substrates using an abrasive and a fluid composition, wherein certain organosulfonic acid compounds are used as oxidizers, and particularly relates to a method of polishing substrates comprising copper, tungsten, titanium, and/or polysilicon using a chemical-mechanical polishing system comprising organosulfonic acids having an electrochemical oxidation potential greater than 0.2V as an oxidizer.

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