Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Having diverse electrical device
Reexamination Certificate
2005-11-29
2005-11-29
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Having diverse electrical device
C438S048000, C438S051000, C438S107000, C438S424000, C438S427000
Reexamination Certificate
active
06969625
ABSTRACT:
A method and structure for a microelectronic device comprises a first film over a substrate, a first polish resistant layer over the first film, a second film over the first polish resistant layer, a second polish resistant layer over the second film, wherein the first and second polish resistant layers comprise diamond-like carbon. The first film comprises an electrically resistive material, while the second film comprises low resistance conductive material. The first film is an electrical resistor embodied as a magnetic read sensor. The electrically resistive material is sensitive to magnetic fields. The device further comprises a generally vertical junction between the first and second films and a dielectric film abutted to the electrically resistive material.
REFERENCES:
patent: 2004/0027730 (2004-02-01), Lille
Cyrille Marie-Claire
Dill Frederick H.
Hwang Cherngye
Li Jui-Lung
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
Johnson Daniel E.
Lee Hsien-Ming
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