CMP assisted liftoff micropatterning

Details CMP assisted liftoff micropatterning CMP assisted liftoff micropatterning

2005-02-22

2005-02-22

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

C257S421000, C257S422000, C257S424000, C257S427000, C438S024000, C438S048000

Reexamination Certificate

active

06858909

ABSTRACT:
A method and structure for a microelectronic device comprises a first film over a substrate, a first polish resistant layer over the first film, a second film over the first polish resistant layer, a second polish resistant layer over the second film, wherein the first and second polish resistant layers comprise diamond-like carbon. The first film comprises an electrically resistive material, while the second film comprises low resistance conductive material. The first film is an electrical resistor embodied as a magnetic read sensor. The electrically resistive material is sensitive to magnetic fields. The device further comprises a generally vertical junction between the first and second films and a dielectric film abutted to the electrically resistive material.

REFERENCES:
patent: 20040027730 (2004-02-01), Lille

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