Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1979-03-15
1981-11-10
Anagnos, Larry N.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
323313, 357 42, G05F 308, G05F 316, H01L 2704, H01L 2978
Patent
active
043000614
ABSTRACT:
A CMOS integrated circuit chip includes a conventional high voltage section and a low voltage section. An on-chip voltage regulator develops a second or pseudo substrate potential at a node that is regulated to a level that is the sum of the thresholds for NMOS and PMOS devices below the V.sub.DD potential. The low voltage section is connected between V.sub.DD and the second substrate potential node. The low voltage section is, therefore, always operated at optimum voltage regardless of device threshold voltage variations that are encountered in CMOS manufacturing. This means that even though the integrated circuit includes a low voltage section, it can be operated over the normal CMOS voltage range as if it contained only high voltage devices.
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Dicke Curtis J.
Mihalich Stephen K.
Anagnos Larry N.
National Semiconductor Corporation
Sheridan James A.
Woodward Gail W.
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