Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-03-29
2005-03-29
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S072000, C257S351000, C438S154000, C438S217000, C345S092000
Reexamination Certificate
active
06872978
ABSTRACT:
In the fabrication of a CMOS-TFT, non-selectively doping (for both of p- and n-type TFTs) and selectively doping (only for the n-type TFT) with p-type impurities (B: boron) are successively performed at very low concentrations to control the threshold voltages (Vthp and Vthn). More specifically, the Id-Vg characteristics of the p- and n-type TFTs are initially negatively shifted. In this state, non-selectively doping is performed positively to shift the p- and n-type TFTs first to adjust the Vthp to a specified value. Selectively doping is then performed positively to shift only the n-type TFT to adjust the Vthn to a specified value. The threshold voltages of the p- and n-type TFTs constructing the CMOS-TFT can be independently and efficiently (with minimum photolithography) controlled with high accuracy.
REFERENCES:
patent: 5403764 (1995-04-01), Yamamoto et al.
patent: 5563427 (1996-10-01), Yudasaka et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5751037 (1998-05-01), Aozasa et al.
patent: 5824573 (1998-10-01), Zhang et al.
patent: 5885861 (1999-03-01), Gardner et al.
patent: 6001677 (1999-12-01), Shimizu
patent: 6033944 (2000-03-01), Shida
patent: 6127210 (2000-10-01), Mimura et al.
patent: 6165876 (2000-12-01), Yamazaki et al.
patent: 6168980 (2001-01-01), Yamazaki et al.
patent: 6278132 (2001-08-01), Yamazaki et al.
patent: 6380016 (2002-04-01), Kohler
patent: 20020132452 (2002-09-01), Oka et al.
patent: 2-23651 (1990-01-01), None
patent: 09186343 (1997-07-01), None
patent: 09270521 (1997-10-01), None
patent: 10-079517 (1998-03-01), None
Igarashi Makoto
Zhang Hongyong
Fujitsu Display Technologies Corporation
Greer Burns & Crain Ltd.
Smoot Stephen W.
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