CMOS type integrated circuit and a method of producing same

Details CMOS type integrated circuit and a method of producing same CMOS type integrated circuit and a method of producing same

1987-01-07

1990-04-10

Hille, Rolf

357 237, 357 71, 357 67, H01L 21469, H01L 21401

Patent

active

049165089

ABSTRACT:
A MOS type integrated circuit transistor includes: a channel region comprising a monocrystalline epitaxial layer; and a source/drain region of said transistor and a wiring region of a diffusion layer formed of a polycrystalline silicon layer grown on an embedded insulating film.

REFERENCES:
patent: 4554572 (1985-11-01), Chatterjee
patent: 4616401 (1986-10-01), Takeuchi
patent: 4621276 (1986-11-01), Malhi
patent: 4727044 (1988-02-01), Yamazaki
patent: 4754314 (1988-06-01), Scott
patent: 4772927 (1988-09-01), Saito et al.
"Silicon-gate MOSFET with Self-Aligned Buried Source and Drain Contacts"-Ning-IBM Technical Disclosure Bulletin, vol. 23, No. 11-Apr. 1981, pp. 5190-5193.
"VLSI" Technology, S. M. Sze, ed., Chap. 11-4, pp. 461-473, 1983 McGraw-Hill Book Company.

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