CMOS twin cell non-volatile random access memory

Details CMOS twin cell non-volatile random access memory CMOS twin cell non-volatile random access memory

2008-03-04

2010-06-29

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185050, C365S185140, C365S185190, C365S202000

Reexamination Certificate

active

07746696

ABSTRACT:
A memory has first and second storage cells, each with a floating node, that store complementary data values. Interlaced inverters quickly sense a voltage difference between the storage cells and provide a data value output when the memory is read. Each floating node includes a tunneling gate of a tunneling transistor, a gate of a bitline transistor, and a plate of a coupling capacitor.

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