CMOS transistor with two channel regions and common gate

Details CMOS transistor with two channel regions and common gate CMOS transistor with two channel regions and common gate

1999-04-22

2000-05-09

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257350, H01L 2978

Patent

active

060607262

ABSTRACT:
A CMOS device includes a first conductivity type semiconductor substrate having an active region, the active region including two second conductivity type of impurity regions and a first channel region between the two second conductivity type impurity regions, a field insulation region on the semiconductor substrate for electrical isolation of the active region from other adjacent active regions, a second conductivity type semiconductor layer on the field insulation layer, the semiconductor layer including two first conductivity type impurity regions and a second channel region between the two first conductivity type impurity regions, and a gate electrode over the first channel region in the active region and the second channel region in the semiconductor layer.

REFERENCES:
patent: 4651408 (1987-03-01), MacElwee et al.
patent: 4654121 (1987-03-01), Miller et al.
patent: 4918510 (1990-04-01), Pfiester
patent: 5334861 (1994-08-01), Pfiester et al.

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