Amplifiers – With semiconductor amplifying device – Including field effect transistor
Reexamination Certificate
2005-02-01
2005-02-01
Mottola, Steven J. (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including field effect transistor
C330S298000, C330S307000, C330S311000
Reexamination Certificate
active
06850117
ABSTRACT:
The present invention provides a breakdown resistant transistor structure for amplifying communication signals. This structure includes a first NMOS transistor having a source connected to ground and a first gate for receiving the input radio frequency signal. The first gate is disposed above a first insulator and the first NMOS transistor having a first transconductance and a first breakdown voltage associated therewith. Also included is a second NMOS transistor having a source connected to the drain of the first NMOS transistor, a gate connected to the reference DC voltage, and a drain that provides the output for the amplified radio signal, the load being disposed between the reference DC voltage and the drain of the second NMOS transistor. The second gate is disposed above a second insulator, the second NMOS transistor has a second transconductance and a second breakdown voltage associated therewith, and the second insulator may be thicker than the first insulator. This results in the first transconductance being greater than the second transconductance, and the second breakdown voltage being greater than the first breakdown voltage.
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Su David
Weber David J.
Yue Patrick
Atheros Communications Inc.
Mottola Steven J.
Pillsbury & Winthrop LLP
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