CMOS time delay integration sensor for X-ray imaging...

Details CMOS time delay integration sensor for X-ray imaging... CMOS time delay integration sensor for X-ray imaging...

2010-11-30

2011-10-18

Porta, David P. (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

Reexamination Certificate

active

08039811

ABSTRACT:
A CMOS TDI image sensor consists of M pixels where each pixel is formed by a column of N TDI stages. Each TDI stage contains a photodiode that collects photo-charge and a pre-amplifier that proportionally converts the photo-charge to a voltage. Each TDI stage also has a set of capacitors, amplifiers, and switches for storage of the integrated signal voltages, where Correlated Double Sampling (CDS) technique (true or pseudo) maintains both photo-signal and reset voltages simultaneously. The CDS signal voltages can be passed from one TDI stage to the next TDI stage along a column for summing. The CDS signal voltages of the last TDI stages of M pixels are read out with a differential amplifier. This CMOS TDI structure is especially advantageous for implementing X-ray scanning detector systems requiring large pixel sizes and signal processing circuitry that is physically separated from the photodiode array for X-ray shielding.

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